Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams

This work was dedicated to the research of possibility to form a nano-sized highly doped boron near-surface layers in silicon. Forming such layers will make it possible to vary the potential barrier height on metal-semiconductor interface. Implantation of boron atoms into the silicon substrate was conducted by the recoil implantation method irradiating the boron film deposited onto the silicon surface by Al-ion high power beams (current density 4–10 A/cm², ion energy 30–150 keV/Z). Analysis of thus made structures by SIMS and measurement of structure´s electrical parameters certificates that the near-surface 10 nm thick conductive layer with the charge carrier concentration greater than 10¹⁸ cm⁻³ is created.