Title :
SOS-based generator with output voltage of 200kV and repetition rate of 2000Hz
Author :
Jiancang Su ; Guozhi Liu ; Yongzhong Ding ; Zhenjie Ding ; Wenhua Huang ; Shi Qiu ; Zhimin Song ; Xiaoxin Song ; Chunliang Liu ; Jian Sun
Author_Institution :
Xi´an Jiaotong Univ., Xi´an, China
Abstract :
An all-solid-state nanosecond generator has been developed and tested in Northwest Institute of Nuclear Technology. The generator is based on SOS-technology and is designed to deliver pulses with FWHM of 40 ns and amplitude up to 200 kV at 2 kHz repetition rate into a load in burst mode. The average output power is 13 kW. The inductive storage, the Semiconductor Opening Switch (SOS) and the magnetic pulse compressor work as the power amplifiers. The magnetic pulse compressor pumps the SOS. A primary charging unit is used as the generator input. The magnetic pulse compressor and the SOS are the key components of the generator. The material of the pulse transformer core is FeSi and Metglas. Two SOS-180-4 diodes are used in the generator in series. This unit has the operating voltage of 360 kV and cuts off currents up to 2 kA about 10ns.The design of generator, its circuitry operating principle, and experimental results obtained have been described.
Keywords :
compressors; inductive energy storage; iron compounds; power amplifiers; power semiconductor switches; pulse generators; pulse transformers; pulsed power supplies; transformer cores; FWHM; FeSi; Metglas; SOS-180-4 diodes; SOS-based generator; all-solid-state nanosecond generator; burst mode; frequency 2000 Hz; inductive storage; magnetic pulse compressor; magnetic pulse compressor pumps; power 13 kW; power amplifiers; primary charging unit; pulse transformer core; repetition rate; semiconductor opening switch; time 40 ns; voltage 200 kV; voltage 360 kV; Amorphous magnetic materials; Magnetic circuits; Magnetic cores; Stacking; Magnetic Switch; Pulsed Power; Repetition Rate; Semiconductor Opening Switch;
Conference_Titel :
High-Power Particle Beams (BEAMS 2004), 2004 International Conference on
Conference_Location :
St. Petersburg
Print_ISBN :
978-5-87911-088-3