EUV and plasma observation in capillary Z-pinch xenon plasmas

Author

Teramoto, Yusuke ; Sato, Hiroto ; Bessho, Kazunori ; Niimi, Gohta ; Shirai, Takahiro ; Yamatani, Daiki ; Takemura, Tetsu ; Yokota, Toshio ; Paul, Khokan C. ; Kabuki, Kiyoyuki ; Miyauchi, Koji ; Ikeuchi, Mitsuru ; Okubo, Keisuke ; Hotta, Kazuaki ; Yoshioka

Author_Institution

Hiratsuka R&D Center, Extreme Ultraviolet Lithography Syst. Dev. Assoc., Shizuoka, Japan

fYear

2004

fDate

18-23 July 2004

Firstpage

898

Lastpage

901

Abstract

Capillary Z-pinch plasmas were studied for the sake of EUV light source development for next generation semiconductor lithography. Magnetic pulse compression generator drove the capillary load providing approximately 25 kA of peak current and 275 ns of pulse duration. Radiation characteristics were investigated using 7-mm-diameter and 6-mm-long capillary. Xenon was used as fuel gas for radiating EUV light of which wavelength is l3.5 nm. Measurements covered overall properties of EUV source such as load current and voltage, absolute radiated EUV energy, spectrum, and image of in-band EUV radiation. Optimum gas condition and dependence of Z-pinch dynamics on the gas condition were investigated.

Keywords

Z pinch; plasma diagnostics; plasma sources; plasma transport processes; ultraviolet lithography; xenon; Xe; absolute radiated EUV energy; capillary Z-pinch xenon plasma; current 25 kA; fuel gas; in-band EUV radiation image; load current; load voltage; magnetic pulse compression generator; next generation semiconductor lithography; ofEUV light source; pulse duration; radiation characteristics; size 6 mm; size 7 mm; time 275 ns; Cathodes; Conductors; Monitoring; Plasmas;

fLanguage

English

Publisher

ieee

Conference_Titel

High-Power Particle Beams (BEAMS 2004), 2004 International Conference on

Conference_Location

St. Petersburg

Print_ISBN

978-5-87911-088-3

Type

conf

Filename

6220689