DocumentCode
564119
Title
Fully integratable 4-phase charge pump architecture for high voltage applications
Author
Shen, Lufei ; Hofmann, Klaus
Author_Institution
Integrated Electron. Syst. Lab., Tech. Univ. Darmstadt, Darmstadt, Germany
fYear
2012
fDate
24-26 May 2012
Firstpage
265
Lastpage
268
Abstract
This paper presents a 4-phase charge pump circuit architecture, which is based on the high voltage CMOS technology with isolated transistor modules from Austriamicrosystems, and can be applied in the applications up to 120V. Due to the introduction of 4-phase clock scheme with dead time techniques, the drawbacks of reverse current at the Pelliconi charge pump are significantly reduced. Correspondingly, the voltage gain and efficiency at each stage are improved. Different configurations of the high voltage sandwich capacitors in this new charge pump architecture are discussed. The feasibility of this proposed charge pump structure is proved by the Post-Layout simulation result.
Keywords
CMOS integrated circuits; DC-DC power convertors; MOSFET; capacitors; charge pump circuits; clocks; Austriamicrosystems; DC-DC step-up conversion; Pelliconi charge pump; dead time techniques; four-phase clock scheme; fully integratable four-phase charge pump architecture; high voltage CMOS technology; high voltage sandwich capacitors; isolated transistor modules; post-layout simulation; reverse current; voltage gain; CMOS integrated circuits; CMOS technology; Capacitors; Charge pumps; Clocks; Threshold voltage; Transistors; CMOS; DC-DC conversion; Pelliconi; body effect; charge pump; high voltage generation; sandwich capacitor;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
Conference_Location
Warsaw
Print_ISBN
978-1-4577-2092-5
Type
conf
Filename
6225757
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