• DocumentCode
    564119
  • Title

    Fully integratable 4-phase charge pump architecture for high voltage applications

  • Author

    Shen, Lufei ; Hofmann, Klaus

  • Author_Institution
    Integrated Electron. Syst. Lab., Tech. Univ. Darmstadt, Darmstadt, Germany
  • fYear
    2012
  • fDate
    24-26 May 2012
  • Firstpage
    265
  • Lastpage
    268
  • Abstract
    This paper presents a 4-phase charge pump circuit architecture, which is based on the high voltage CMOS technology with isolated transistor modules from Austriamicrosystems, and can be applied in the applications up to 120V. Due to the introduction of 4-phase clock scheme with dead time techniques, the drawbacks of reverse current at the Pelliconi charge pump are significantly reduced. Correspondingly, the voltage gain and efficiency at each stage are improved. Different configurations of the high voltage sandwich capacitors in this new charge pump architecture are discussed. The feasibility of this proposed charge pump structure is proved by the Post-Layout simulation result.
  • Keywords
    CMOS integrated circuits; DC-DC power convertors; MOSFET; capacitors; charge pump circuits; clocks; Austriamicrosystems; DC-DC step-up conversion; Pelliconi charge pump; dead time techniques; four-phase clock scheme; fully integratable four-phase charge pump architecture; high voltage CMOS technology; high voltage sandwich capacitors; isolated transistor modules; post-layout simulation; reverse current; voltage gain; CMOS integrated circuits; CMOS technology; Capacitors; Charge pumps; Clocks; Threshold voltage; Transistors; CMOS; DC-DC conversion; Pelliconi; body effect; charge pump; high voltage generation; sandwich capacitor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
  • Conference_Location
    Warsaw
  • Print_ISBN
    978-1-4577-2092-5
  • Type

    conf

  • Filename
    6225757