DocumentCode
564139
Title
Technology and device design and optimization for the MOSFET hall sensor on SOI structure
Author
Dolgiy, Leonid ; Lovshenko, Ivan ; Nelayev, Vladislav ; Shelibak, Ibrahim ; Shvedov, Sergey ; Turtsevich, Arkady
Author_Institution
Micro- & Nanoelectron. Dept., Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear
2012
fDate
24-26 May 2012
Firstpage
398
Lastpage
400
Abstract
Results of the magnetosensitive device (a MOSFET Hall sensor on the SOI structure) manufacturing simulation are presented. Electrical features of the device were calculated and the optimization research of the process parameters influence on voltage-current characteristics of the device was made.
Keywords
MOSFET; circuit optimisation; electric sensing devices; MOSFET Hall sensor; SOI structure; device design; device optimization; magnetosensitive device manufacturing simulation; voltage-current characteristics; Logic gates; MOSFET circuits; Optimization; Sensitivity; Silicon; Silicon on insulator technology; Substrates; Hall effect; SOI structure; Semiconductor sensor; device features; simulation; technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
Conference_Location
Warsaw
Print_ISBN
978-1-4577-2092-5
Type
conf
Filename
6226215
Link To Document