Title :
Technology and device design and optimization for the MOSFET hall sensor on SOI structure
Author :
Dolgiy, Leonid ; Lovshenko, Ivan ; Nelayev, Vladislav ; Shelibak, Ibrahim ; Shvedov, Sergey ; Turtsevich, Arkady
Author_Institution :
Micro- & Nanoelectron. Dept., Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
Results of the magnetosensitive device (a MOSFET Hall sensor on the SOI structure) manufacturing simulation are presented. Electrical features of the device were calculated and the optimization research of the process parameters influence on voltage-current characteristics of the device was made.
Keywords :
MOSFET; circuit optimisation; electric sensing devices; MOSFET Hall sensor; SOI structure; device design; device optimization; magnetosensitive device manufacturing simulation; voltage-current characteristics; Logic gates; MOSFET circuits; Optimization; Sensitivity; Silicon; Silicon on insulator technology; Substrates; Hall effect; SOI structure; Semiconductor sensor; device features; simulation; technology;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
Conference_Location :
Warsaw
Print_ISBN :
978-1-4577-2092-5
