DocumentCode
564162
Title
Ballistic transport in nanoscale devices
Author
Arora, Vijay K.
Author_Institution
Fac. of Electr. Eng., Univ. Teknol. Malaysia, Skudai, Malaysia
fYear
2012
fDate
24-26 May 2012
Firstpage
17
Lastpage
24
Abstract
Ballistic transport from low-field to high-field regime is reviewed with transition from low-field ballistic mobility to high-field drift velocity limited to the intrinsic velocity for a given dimensionality. Equilibrium Fermi-Dirac to Boltzmann to nonequilibrium Arora distribution is delineated and applied. Ballistic injection from the contacts is shown to be of paramount importance as channels scale down to lengths below the scattering-limited mean free path (mfp). Mobility and drift velocity expressions covering the wide spectrum are obtained and compared with existing experimental data. The gamut spans low to high field transport, nondegenerate to degenerate statistics, and scattering-limited stochastic to unilateral streamlined regime.
Keywords
ballistic transport; ballistics; carrier mean free path; electrical contacts; statistics; ballistic injection; ballistic transport; channel scale; equilibrium Fermi-Dirac-Boltzmann; gamut; high-field drift velocity expression; intrinsic velocity; low-field ballistic mobility; nanoscale device; nondegeneration statistic; nonequilibrium Arora distribution; scattering-limited mean free path; scattering-limited mfp; scattering-limited stochastic; statistic degeneration; unilateral streamlined regime; Ballistic transport; Distribution functions; Electric fields; Electron mobility; Equations; Neodymium; Vectors; NEADF; ballistic mobility; contacts injection; intrinsic velocity; nonequilibrium Arora Dsitribution; phonon emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
Conference_Location
Warsaw
Print_ISBN
978-1-4577-2092-5
Type
conf
Filename
6226264
Link To Document