Simulation and modeling of nanoscale multiple-gate SOI MOSFETs

This paper presents some insights into the modeling of different Multi-Gate SOI MOSFET structures, and in particular Tri-Gate MOSFETs (TGFETs). For long-channel case an electrostatic model can be developed from the solution of the 2D Poisson´s equation in the section perpendicular to the channel. allowing it to be incorporated in quasi-2D compact models. For short-channel devices a model can be derived from a 3D electrostatic analysis. The subthreshold current model was successfully compared with experimental measurements, in terms of subthrehold slope, threshold voltage and DIBL.