Two-dimensional physics-based modeling of dopant-segregated Schottky barrier UTB MOSFETs

Author

Schwarz, Mike ; Holtij, Thomas ; Kloes, Alexander ; Iñíguez, Benjamín

Author_Institution

Tech. Hochschule Mittelhessen, Giessen, Germany

fYear

2012

fDate

24-26 May 2012

Firstpage

88

Lastpage

93

Abstract

In this paper, we present an analytical modeling approach to predict the tunneling and thermionic current of Schottky barrier UTB MOSFETs with dopant-segregated source and drain junctions. Essential 2D effects on the currents are included in the model which are combined with diffusion effects in the channel region. The model is compared with measurement data for a dopant segregated fully-depleted Schottky barrier MOSFET and is in a good agreement.

Keywords

MOSFET; Schottky barriers; integrated circuit modelling; tunnelling; UTB MOSFET; analytical modeling approach; channel region; dopant segregated fully-depleted Schottky barrier MOSFET; dopant-segregated source junction; drain junctions; essential 2D effects; measurement data; thermionic current; tunneling prediction; two-dimensional physics-based modeling; ultrathin body MOSFET; Electric potential; Electrostatics; MOSFETs; Mathematical model; Schottky barriers; Semiconductor process modeling; Tunneling; 2D Poisson; Schottky barrier; compact modeling; conformal mapping; dopant segregation; ultra-thin body (UTB) MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference

Conference_Location

Warsaw

Print_ISBN

978-1-4577-2092-5

Type

conf

Filename

6226272