Standardization of multigate MOSFET modeling

A fully explicit and physics-based model has been developed for arbitrary shapes of lightly doped long-channel nonplanar multigate MOSFETs (MuGFETs). Through the definition of equivalent geometrical parameters, MuGFETs as quadruple-gate (QG), triple-gate (TG), triangular gate, cylindrical gate-all-around (GAA), and FinFETs, are mapped into the symmetric double-gate (DG) MOSFET topology without the need to introduce any unphysical parameter. Based on this modeling approach, any multigate architecture inherits of the fundamental relationships that have been developed for planar DG MOSFETs, including the normalization of all electrical quantities that considerably simplifies its analysis. We propose here to extend the validity of this MuGFETs standard model to short channels through a 2-D short-channel effect modeling of the DG FinFET. 3-D numerical simulations of small geometries of TG MOSFETs are compared with the model.