DocumentCode :
564176
Title :
SRAM lifetime improvement by using adaptive proactive reconfiguration
Author :
Pouyan, Peyman ; Amat, Esteve ; Rubio, Antonio
Author_Institution :
Dept. of Electron. Eng., UPC Barcelona Tech, Barcelona, Spain
fYear :
2012
fDate :
24-26 May 2012
Firstpage :
115
Lastpage :
119
Abstract :
Modern generations of CMOS technology nodes are facing critical causes of hardware reliability failures, which were not significant in the past. Such vulnerabilities make it essential to investigate new robust design strategies at the Nano-scale circuit system level. In this paper we have introduced an adaptive proactive reconfiguration technique that considers the inherent process variability (variability-aware) and BTI aging, and effectively enlarges the SRAM lifetime.
Keywords :
CMOS integrated circuits; SRAM chips; ageing; integrated circuit design; integrated circuit reliability; nanoelectronics; BTI aging; CMOS technology; SRAM lifetime improvement; adaptive proactive reconfiguration; hardware reliability failures; nanoscale circuit system level; process variability; robust design strategies; Adaptive systems; Aging; Degradation; Fluctuations; Random access memory; Stress; BTI aging; SRAM; multi-spare proactive reconfiguration; process variability; reconfiguration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference
Conference_Location :
Warsaw
Print_ISBN :
978-1-4577-2092-5
Type :
conf
Filename :
6226284
Link To Document :
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