Title :
Small signal parameter investigation on the intrinsic stability of HBT
Author :
Chen, Yanhu ; Li, Huijun
Author_Institution :
Sch. of Inf. Sci. & Eng., Shan Dong Univ., Jinan, China
Abstract :
In this paper the intrinsic stability of the heterojunction bipolar transistor(HBT) was analyzed and discussed based on a common emitter T-type small signal equivalent circuit model. The stability factor(K-factor) of HBT device was numerical analyzed with the small signal model. The effect of the mainly small signal model parameters of HBT on the intrinsic stability of the HBT were examined. The results show that optimum selection of the device structure and bias condition can be helpful to the improvement of the intrinsic stability of the HBT. Parameter analysis results of the stability were also supported by some experimental results of the stability of HBT.
Keywords :
equivalent circuits; heterojunction bipolar transistors; HBT; K-factor; T-type small signal equivalent circuit model; bias condition; device structure; heterojunction bipolar transistor; intrinsic stability; parameter analysis; small signal parameter investigation; stability factor; Circuit stability; Electronic ballasts; Heterojunction bipolar transistors; Integrated circuit modeling; Numerical stability; Stability analysis; Thermal stability;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6229990
