Title :
Design of UWB Cascode SiGe BiCMOS LNA with current reuse
Author :
Ding, Chunbao ; Zhang, Wanrong ; Xie, Hongyun ; Shen, Pei ; Chen, Liang ; Guo, Zhengjie ; Xing, Guanghui ; Zhang, Yujie ; Lu, Zhiyi
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Abstract :
A Cascode SiGe BiCMOS low-noise amplifier (LNA) is presented for ultra-wideband (UWB) application. The emitter degenerative inductive technique is employed to achieve input impedance matching and optimize the noise performance. The output impedance matching is achieved by resistance-inductor shunt feedback. The current reuse topology is adopted to achieve high gain with low power consumption. Based on TSMC 0.35μm SiGe BiCMOS process, the topology and chip layout of the proposed LNA have been designed, its area is 0.62×0.64 mm2. The simulation results of the LNA demonstrate that in the range of UWB, the noise figure is 2.6~4.1 dB, the gain is 19.3~20.8 dB, gain flatness is ±0.75 dB, linearity is -4~ -7dBm, the input and output match well, the LNA is unconditionally stable in the whole band.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; field effect MMIC; impedance matching; low noise amplifiers; ultra wideband technology; SiGe; UWB cascode BiCMOS LNA; chip layout; current reuse topology; emitter degenerative inductive technique; gain 19.3 dB to 20.8 dB; impedance matching; low noise amplifier; noise figure 2.6 dB to 4.1 dB; noise performance; resistance inductor shunt feedback; size 0.35 mum; ultra wideband technology; Gain; Impedance; Impedance matching; Noise; Noise figure; Silicon germanium; Topology;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6229998
