DocumentCode :
564267
Title :
Transient analysis of IMPATT oscillator with extended spectral-element time-domain method
Author :
Sheng, Y.J. ; Chen, R.S. ; Ye, Z.B.
Author_Institution :
Dept. of Commun. Eng., Nanjing Univ. of Sci. & Technol., Nanjing, China
Volume :
3
fYear :
2012
fDate :
5-8 May 2012
Firstpage :
1
Lastpage :
3
Abstract :
The microwave IMPATT oscillator is analyzed by a hybrid electromagnetic-circuit simulator, which is based on the spectral-element time domain (SETD) method. In the space of electromagnetic, the IMPATT diode is substituted by a one-port equivalent circuit. At each time step, the change of current on diode will influence the field around it, and vice versa. For the extended SETD method, the solver is fully explicit, so the CPU time can be significantly reduced. A simple numerical result demonstrates the ability and effectiveness of the extended SETD method for the fast analysis of microwave IMPATT Oscillator.
Keywords :
IMPATT oscillators; microwave oscillators; time-domain analysis; transient analysis; CPU time; IMPATT diode; extended SETD method; extended spectral-element time-domain method; hybrid electromagnetic-circuit simulator; microwave IMPATT oscillator; one-port equivalent circuit; transient analysis; Equations; Mathematical model; Microwave circuits; Oscillators; P-i-n diodes; Time domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
Type :
conf
DOI :
10.1109/ICMMT.2012.6230145
Filename :
6230145
Link To Document :
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