DocumentCode
564267
Title
Transient analysis of IMPATT oscillator with extended spectral-element time-domain method
Author
Sheng, Y.J. ; Chen, R.S. ; Ye, Z.B.
Author_Institution
Dept. of Commun. Eng., Nanjing Univ. of Sci. & Technol., Nanjing, China
Volume
3
fYear
2012
fDate
5-8 May 2012
Firstpage
1
Lastpage
3
Abstract
The microwave IMPATT oscillator is analyzed by a hybrid electromagnetic-circuit simulator, which is based on the spectral-element time domain (SETD) method. In the space of electromagnetic, the IMPATT diode is substituted by a one-port equivalent circuit. At each time step, the change of current on diode will influence the field around it, and vice versa. For the extended SETD method, the solver is fully explicit, so the CPU time can be significantly reduced. A simple numerical result demonstrates the ability and effectiveness of the extended SETD method for the fast analysis of microwave IMPATT Oscillator.
Keywords
IMPATT oscillators; microwave oscillators; time-domain analysis; transient analysis; CPU time; IMPATT diode; extended SETD method; extended spectral-element time-domain method; hybrid electromagnetic-circuit simulator; microwave IMPATT oscillator; one-port equivalent circuit; transient analysis; Equations; Mathematical model; Microwave circuits; Oscillators; P-i-n diodes; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location
Shenzhen
Print_ISBN
978-1-4673-2184-6
Type
conf
DOI
10.1109/ICMMT.2012.6230145
Filename
6230145
Link To Document