• DocumentCode
    564267
  • Title

    Transient analysis of IMPATT oscillator with extended spectral-element time-domain method

  • Author

    Sheng, Y.J. ; Chen, R.S. ; Ye, Z.B.

  • Author_Institution
    Dept. of Commun. Eng., Nanjing Univ. of Sci. & Technol., Nanjing, China
  • Volume
    3
  • fYear
    2012
  • fDate
    5-8 May 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The microwave IMPATT oscillator is analyzed by a hybrid electromagnetic-circuit simulator, which is based on the spectral-element time domain (SETD) method. In the space of electromagnetic, the IMPATT diode is substituted by a one-port equivalent circuit. At each time step, the change of current on diode will influence the field around it, and vice versa. For the extended SETD method, the solver is fully explicit, so the CPU time can be significantly reduced. A simple numerical result demonstrates the ability and effectiveness of the extended SETD method for the fast analysis of microwave IMPATT Oscillator.
  • Keywords
    IMPATT oscillators; microwave oscillators; time-domain analysis; transient analysis; CPU time; IMPATT diode; extended SETD method; extended spectral-element time-domain method; hybrid electromagnetic-circuit simulator; microwave IMPATT oscillator; one-port equivalent circuit; transient analysis; Equations; Mathematical model; Microwave circuits; Oscillators; P-i-n diodes; Time domain analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
  • Conference_Location
    Shenzhen
  • Print_ISBN
    978-1-4673-2184-6
  • Type

    conf

  • DOI
    10.1109/ICMMT.2012.6230145
  • Filename
    6230145