Source module based on diodes-multipliers to extend signal generator capability from 170 to 325GHz

Author

Deng, Jianqin ; Jiang, Wanshun ; Liu, JinXian

Author_Institution

Nat. Key Lab. of Sci. & Technol. on Electron. Test & Meas., Qingdao Econ. & Technol. Dev. Zone, Qingdao, China

Volume

4

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

3

Abstract

A source module, which extends the capability of the signal generator from 170 to 325GHz, has been designed and analyzed in this paper. Theory about the source module, design and construction of the millimeter-wave multipliers are dicussed in detail. Doubler and tripler of the source module are designed with planar GaAs Schottky-barrier diodes in a balanced configuration. The W-band tripler is the key component for the 170-325GHz source module, which is design with multilayer circuits. So, it´s 1dB compression point is higher than traditional design.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; frequency multipliers; gallium arsenide; millimetre wave diodes; millimetre wave frequency convertors; signal generators; GaAs; W-band tripler; compression point; diodes-multipliers; frequency 170 GHz to 325 GHz; millimeter-wave multipliers; multilayer circuits; planar Schottky-barrier diodes; signal generator capability; source module design; Harmonic analysis; Millimeter wave radar; Power generation; Power harmonic filters; Schottky diodes; Signal generators; Soure module; multipliers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6230292

Filename

6230292