Title :
A 0.7–1.9GHz broadband pseudo-differential power amplifier using 0.13-μm SiGe HBT technology
Author :
Li Wenyuan ; Zhang Qian
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
Abstract :
In this paper, a broadband power amplifier operating from 0.7GHz to 1.9GHz is designed and fabricated using 0.13-μm SiGe HBT technology. The pseudo-differential structure, adaptive bias control technique, broadband matching network and compensated matching technique are used to improve the performance. The simulation results show that the power amplifier operates from 0.7GHz to 1.9GHz, P1dB and PAE are better than 25dBm and 23%, respectively.
Keywords :
Ge-Si alloys; UHF bipolar transistors; UHF power amplifiers; adaptive control; differential amplifiers; heterojunction bipolar transistors; semiconductor materials; wideband amplifiers; HBT technology; PAE; SiGe; adaptive bias control technique; broadband matching network; broadband pseudo-differential power amplifier; compensated matching technique; frequency 0.7 GHz to 1.9 GHz; power added efficiency; pseudo-differential structure; size 0.13 mum; Broadband amplifiers; Heterojunction bipolar transistors; Impedance matching; Linearity; Power amplifiers; Silicon germanium; Adaptive bias control; Broadband matching networks; Pseudo-differential broadband power amplifier;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6230304
