A 0.7–1.9GHz broadband pseudo-differential power amplifier using 0.13-μm SiGe HBT technology

Author

Li Wenyuan ; Zhang Qian

Author_Institution

Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China

Volume

4

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

4

Abstract

In this paper, a broadband power amplifier operating from 0.7GHz to 1.9GHz is designed and fabricated using 0.13-μm SiGe HBT technology. The pseudo-differential structure, adaptive bias control technique, broadband matching network and compensated matching technique are used to improve the performance. The simulation results show that the power amplifier operates from 0.7GHz to 1.9GHz, P_1dB and PAE are better than 25dBm and 23%, respectively.

Keywords

Ge-Si alloys; UHF bipolar transistors; UHF power amplifiers; adaptive control; differential amplifiers; heterojunction bipolar transistors; semiconductor materials; wideband amplifiers; HBT technology; PAE; SiGe; adaptive bias control technique; broadband matching network; broadband pseudo-differential power amplifier; compensated matching technique; frequency 0.7 GHz to 1.9 GHz; power added efficiency; pseudo-differential structure; size 0.13 mum; Broadband amplifiers; Heterojunction bipolar transistors; Impedance matching; Linearity; Power amplifiers; Silicon germanium; Adaptive bias control; Broadband matching networks; Pseudo-differential broadband power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6230304

Filename

6230304