Title :
A S-band 7 W GaN HEMT adaptive power amplifier
Author :
Rosolowski, Dawid ; Wojtasiak, Wojciech ; Morawski, Tadeusz
Author_Institution :
Inst. of Radioelectron., Warsaw Univ. of Technol., Warsaw, Poland
Abstract :
In the paper a 7 W GaN HEMT adaptive power amplifier (APA) operating over 1.8 to 4.0 GHz is presented. To control APA states the six pin diodes as regulators have been used in both input and output matching networks. The design is based on the small-signal approach for modelling active elements such as transistor and regulators. The measured results of APA have proven usefulness of the proposed design methodology. The APA is controlled by specialized unit - Universal Controller of Adaptation.
Keywords :
gallium compounds; high electron mobility transistors; microwave power amplifiers; microwave power transistors; APA; GaN; S-band HEMT adaptive power amplifier; active element modelling; input matching networks; output matching networks; power 7 W; small-signal approach; transistor; HEMTs; Impedance matching; Integrated circuit modeling; PIN photodiodes; Power generation; Regulators; Adaptive Power Amplifier; Devices for SDR systems; RF/MW Adaptivity;
Conference_Titel :
Microwave Radar and Wireless Communications (MIKON), 2012 19th International Conference on
Conference_Location :
Warsaw
Print_ISBN :
978-1-4577-1435-1
DOI :
10.1109/MIKON.2012.6233488
