DocumentCode
564645
Title
Focusing on Doherty Power Amplifiers for S-Band
Author
Giofré, Rocco ; Piazzon, Luca ; Colantonio, Paolo ; Giannini, Franco
Author_Institution
Electron. Eng. Dept., Univ. of Roma Tor Vergata, Roma, Italy
Volume
1
fYear
2012
fDate
21-23 May 2012
Firstpage
186
Lastpage
189
Abstract
The aim of this paper is to provide an overview of the actual state-of-art about the Doherty Power Amplifier (DPA) for S-Band application and to present a new realization using GaN devices able to provide 41dBm saturated output power with 60% drain efficiency and 10dB gain at 2.14GHz. The design of the prototype will be described starting from the acquisition of the system requirements up to its actual implementation and layout generation. The DPA benchmark will be used also to compare the prototype performance with other state-of-art DPAs.
Keywords
III-V semiconductors; UHF amplifiers; gallium compounds; power amplifiers; wide band gap semiconductors; DPA; DPA benchmark; Doherty power amplifiers; GaN; S-band application; frequency 2.41 GHz; gain 10 dB; Gain; Gallium nitride; Layout; Power amplifiers; Power generation; Prototypes; Wireless communication; Doherty Amplifier; GaN; PA; S-Band;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Radar and Wireless Communications (MIKON), 2012 19th International Conference on
Conference_Location
Warsaw
Print_ISBN
978-1-4577-1435-1
Type
conf
DOI
10.1109/MIKON.2012.6233526
Filename
6233526
Link To Document