Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric

Author

Ling Xuan Qian ; Lai, P.T.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China

Volume

35

Issue

3

fYear

2014

fDate

Mar-14

Firstpage

363

Lastpage

365

Abstract

Fluorinated amorphous InGaZnO thin-film transistor with HfLaO gate dielectric has been studied by treating InGaZnO film in a CHF₃/O₂ plasma. The saturation carrier mobility can be improved from 29.6 cm²/V·s to as high as 39.8 cm²/V·s. In addition, the passivation effect of the fluorination on the dominant donor-like traps at the InGaZnO/HfLaO interface is observed, as reflected by suppression of hysteresis phenomenon and smaller subthreshold swing. Measurement result of low-frequency noise further supports the improvement in electrical properties by the plasma treatment.

Keywords

carrier mobility; gallium compounds; hafnium compounds; indium compounds; lanthanum compounds; passivation; thin film transistors; zinc compounds; HfLaO; InGaZnO; dominant donor-like traps; electrical properties; fluorinated amorphous thin-film transistor; fluorination; gate dielectric; hysteresis phenomenon suppression; low-frequency noise; passivation effect; plasma treatment; saturation carrier mobility; subthreshold swing; Dielectrics; Hafnium compounds; Logic gates; Plasmas; Thin film transistors; Amorphous InGaZnO (a-IGZO); HfLaO; fluorine; plasma; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2296895

Filename

6709777