Heterogeneous GaAs - Si bonded stack

In this paper transition layer is used for heterogeneous stack substrate bonding between GaAs and Si which includes Wafer to Wafer bonding technology and GaAs MMIC Die to Si wafer bonding technology. In consideration of the different thermal expansion coefficient between GaAs and Si,low temperature metal eutectic bonding was adopted for heterogeneous substrate bonding. It´s succeeding to heterogeneous integration between GaAs and Si by research AuSn material and bonding process. Energy spectrum of SEM is used to analyze the ratio of AuSn transition layer which is 80:20 and therefore the result of heterogeneous integration is perfect.