Room temperature visible luminescence in wide band gap chalcogenide glasses

Author

Mitsa, V.M. ; Holomb, R.M. ; Lovas, G. ; Ivanda, M. ; Rudyko, G. Yu ; Gule, E.G. ; Fekeshgazi, I.V.

Author_Institution

Inst. for Solid State Phys. & Chem., Uzhgorod Nat. Univ., Uzhgorod, Ukraine

fYear

2012

fDate

21-25 May 2012

Firstpage

21

Lastpage

22

Abstract

Visible photoluminescence (PL) was observed in binary g-As₂S₃, technologically modified g-GeS₂(T_iV_j) and ternary glasses along (As₂S₃)x(GeS₂)_1-x line. PL maximum in g-As₂S₃ at 2.43 eV was assigned to band-to-band transitions and its position is in good agreement with value of optical band-gap edge absorption (E_o=2.4 eV). It is suggested that the peak at 2.2-2.3 eV in g-GeS₂(T_iV_j) and GeS₂-based ternary glasses may be attributed to presence of GeO_x species. Complex PL peak at 2.6-2.7 eV in GeS₂-based glasses was identified with germanium sulfur sites.

Keywords

arsenic compounds; chalcogenide glasses; energy gap; germanium compounds; photoluminescence; sulphur compounds; wide band gap semiconductors; (As₂S₃)_x(GeS₂)_1-x; band-to-band transitions; germanium sulfur sites; optical band-gap edge absorption; temperature 293 K to 298 K; ternary glasses; visible photoluminescence; wide band gap chalcogenide glasses; Absorption; Germanium; Glass; Optical films; Photoluminescence; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

MIPRO, 2012 Proceedings of the 35th International Convention

Conference_Location

Opatija

Print_ISBN

978-1-4673-2577-6

Type

conf

Filename

6240605