Title :
Room temperature visible luminescence in wide band gap chalcogenide glasses
Author :
Mitsa, V.M. ; Holomb, R.M. ; Lovas, G. ; Ivanda, M. ; Rudyko, G. Yu ; Gule, E.G. ; Fekeshgazi, I.V.
Author_Institution :
Inst. for Solid State Phys. & Chem., Uzhgorod Nat. Univ., Uzhgorod, Ukraine
Abstract :
Visible photoluminescence (PL) was observed in binary g-As2S3, technologically modified g-GeS2(TiVj) and ternary glasses along (As2S3)x(GeS2)1-x line. PL maximum in g-As2S3 at 2.43 eV was assigned to band-to-band transitions and its position is in good agreement with value of optical band-gap edge absorption (Eo=2.4 eV). It is suggested that the peak at 2.2-2.3 eV in g-GeS2(TiVj) and GeS2-based ternary glasses may be attributed to presence of GeOx species. Complex PL peak at 2.6-2.7 eV in GeS2-based glasses was identified with germanium sulfur sites.
Keywords :
arsenic compounds; chalcogenide glasses; energy gap; germanium compounds; photoluminescence; sulphur compounds; wide band gap semiconductors; (As2S3)x(GeS2)1-x; band-to-band transitions; germanium sulfur sites; optical band-gap edge absorption; temperature 293 K to 298 K; ternary glasses; visible photoluminescence; wide band gap chalcogenide glasses; Absorption; Germanium; Glass; Optical films; Photoluminescence; Photonic band gap;
Conference_Titel :
MIPRO, 2012 Proceedings of the 35th International Convention
Conference_Location :
Opatija
Print_ISBN :
978-1-4673-2577-6
