A 2.5-GHz GaN power amplifier design and modeling by circuit-electromagnetic co-simulation

Author

Broznic, Andro ; Blecic, Raul ; Baric, Adrijan

Author_Institution

Fac. of Electr. Eng. & Comput., Univ. of Zagreb, Zagreb, Croatia

fYear

2012

fDate

21-25 May 2012

Firstpage

78

Lastpage

82

Abstract

In this paper a 2.5-GHz GaN power amplifier is presented. The amplifier is designed to achieve unconditional stability in the frequency range from DC to 6 GHz. The circuit-EM co-simulation model of the complete amplifier, including transistor model, passive components, connector model and the EM model of the critical parts of the design is created. The impact of each component is addressed. The amplifier is processed and measured, the measurements are compared to simulations and a good agreement is achieved. The amplifier parameters power added efficiency (PAE), drain efficiency (DE) and IP3 are measured and compared to results published in open literature.

Keywords

III-V semiconductors; UHF amplifiers; analogue integrated circuits; gallium compounds; integrated circuit design; integrated circuit modelling; power amplifiers; wide band gap semiconductors; EM model; GaN; IP3; circuit-electromagnetic co-simulation; connector model; drain efficiency; frequency 2.5 GHz; frequency 6 GHz; passive components; power added efficiency; power amplifier design; power amplifier modeling; transistor model; Connectors; Integrated circuit modeling; Microwave amplifiers; Microwave circuits; Power amplifiers; Radio frequency; Stability analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

MIPRO, 2012 Proceedings of the 35th International Convention

Conference_Location

Opatija

Print_ISBN

978-1-4673-2577-6

Type

conf

Filename

6240617