• DocumentCode
    565287
  • Title

    Capacitance of TSVs in 3-D stacked chips a problem? Not for neuromorphic systems!

  • Author

    Joubert, Antoine ; Duranton, Marc ; Belhadj, Bilel ; Temam, Olivier ; Héliot, Rodolphe

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2012
  • fDate
    3-7 June 2012
  • Firstpage
    1260
  • Lastpage
    1261
  • Abstract
    In order to cope with increasingly stringent power and variability constraints, architects need to investigate alternative paradigms. Neuromorphic architectures are increasingly considered (especially spike-based neurons) because of their inherent robustness and their energy efficiency. Yet, they have two limitations: the massive parallelism among neurons is hampered by 2D planar circuits, and the most cost-effective hardware neurons are analog implementations that require large capacitors, We show that 3D stacking with Through-Silicon-Vias applied to neuromorphic architectures can solve both issues: not only by providing massive parallelism between layers, but also by turning the parasitic capacitances of TSVs into useful capacitive storage.
  • Keywords
    capacitance; capacitors; neural chips; three-dimensional integrated circuits; 2D planar circuits; 3D stacked chips; 3D stacking; TSV; capacitive storage; capacitors; energy efficiency; hardware neurons; massive parallelism; neuromorphic architectures; neuromorphic system; parasitic capacitance; spike-based neurons; stringent power; through silicon vias; variability constraints; Capacitance; Capacitors; Neuromorphics; Neurons; Silicon; Standards; Through-silicon vias; 3D architectures; Neuromorphic systems; analog circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference (DAC), 2012 49th ACM/EDAC/IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    0738-100X
  • Print_ISBN
    978-1-4503-1199-1
  • Type

    conf

  • Filename
    6241670