• DocumentCode
    565410
  • Title

    InGaAsP/InP MQW FP laser and silicon platform integration by direct bonding

  • Author

    Higo, Akio ; LI, Ling-Han ; Higurashi, Eiji ; Sugiyama, Masakazu ; Nakano, Yoshiaki

  • Author_Institution
    Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2012
  • fDate
    29-31 May 2012
  • Firstpage
    24
  • Lastpage
    25
  • Abstract
    InGaAsP/InP active layer on silicon heterointegration by Ar/O2 plasma assisted direct bonding in air was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved to realized a direct-current-pumped Fabry-Perot Laser by pulse operation at 43 mA threshold current.
  • Keywords
    III-V semiconductors; argon; bonding processes; gallium arsenide; indium compounds; optical pumping; oxygen; plasma materials processing; quantum well lasers; silicon-on-insulator; Ar-O2; InGaAsP-InP; MQW FP laser; active layer; current 43 mA; current injection; direct current pumped Fabry-Perot laser; multiquantum well lasers; plasma assisted direct bonding; silicon heterointegration; silicon-on-insulator; threshold current; Argon; Bonding; Educational institutions; Photonics; Plasmas; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Internet (COIN), 2012 10th International Conference on
  • Conference_Location
    Yokohama, Kanagawa
  • Print_ISBN
    978-1-4673-1654-5
  • Type

    conf

  • Filename
    6245920
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=565410