Title :
InGaAsP/InP MQW FP laser and silicon platform integration by direct bonding
Author :
Higo, Akio ; LI, Ling-Han ; Higurashi, Eiji ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Author_Institution :
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan
Abstract :
InGaAsP/InP active layer on silicon heterointegration by Ar/O2 plasma assisted direct bonding in air was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved to realized a direct-current-pumped Fabry-Perot Laser by pulse operation at 43 mA threshold current.
Keywords :
III-V semiconductors; argon; bonding processes; gallium arsenide; indium compounds; optical pumping; oxygen; plasma materials processing; quantum well lasers; silicon-on-insulator; Ar-O2; InGaAsP-InP; MQW FP laser; active layer; current 43 mA; current injection; direct current pumped Fabry-Perot laser; multiquantum well lasers; plasma assisted direct bonding; silicon heterointegration; silicon-on-insulator; threshold current; Argon; Bonding; Educational institutions; Photonics; Plasmas; Silicon;
Conference_Titel :
Optical Internet (COIN), 2012 10th International Conference on
Conference_Location :
Yokohama, Kanagawa
Print_ISBN :
978-1-4673-1654-5
