DocumentCode
56553
Title
An Energy Efficient 32-nm 20-MB Shared On-Die L3 Cache for Intel® Xeon® Processor E5 Family
Author
Min Huang ; Mehalel, Moty ; Arvapalli, Ramesh ; Songnian He
Author_Institution
Intel Corp., Santa Clara, CA, USA
Volume
48
Issue
8
fYear
2013
fDate
Aug. 2013
Firstpage
1954
Lastpage
1962
Abstract
An energy efficient on-die 20-way set associative L3 cache of size 20 MB for the Intel® Xeon® processor E5 family is presented. It is manufactured in the Intel´s 32-nm second generation of high-K dielectric metal gate process with 9-copper metal layers. The L3 cache design uses 0.2119 um 2 cell for the high density big array and 0.2725 um 2cell for the high performance smaller arrays. The power efficiency was achieved by employing advanced power saving schemes and effective Vccmin design techniques. The proposed L3 cache topology seamlessly supports a high density modular and energy efficient designs. The effective and rich redundancy design improves both yield and low voltage operations. The L3 cache achieves more than 20-40% energy efficiency when compared to previous generations and demonstrates wide operating ranges from 1.2 GHz at below 0.7 V to greater than 4.0 GHz at above 1.0 V.
Keywords
SRAM chips; cache storage; high-k dielectric thin films; integrated circuit design; Intel Xeon processor E5 family; L3 cache topology; SRAM; advanced power saving schemes; effective Vccmin design techniques; energy efficient shared on-die L3 cache; frequency 1.2 GHz; high density modular-energy efficient designs; high performance smaller arrays; high-k dielectric metal gate process; metal layers; size 32 nm; storage capacity 20 Mbit; Access control; Arrays; Clocks; Maintenance engineering; Metals; Random access memory; Redundancy; Circuit design; SRAM; clock; low Vccmin; on-die cache; power reduction; redundancy design;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2013.2258815
Filename
6515193
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