High Mobility Field-Effect Thin Film Transistor Using Room-Temperature High- $\kappa$ Gate Dielectrics

This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO₂ and Y₂O₃ exhibited favorable adhesion properties on a flexible substrate compared with conventional low-κ SiO₂ film. Based on the experimental results, the room-temperature IGZO/HfO2 TFTs demonstrated effective device integrity, and achieve a low drive voltage of V, a low threshold voltage of 0.46 ±006 V, a low sub-threshold swing of 110 ±6 mV/decade and an extremely high mobility of 60.2 ±32 cm ²/V·s. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.