DocumentCode :
565864
Title :
Prediction of the Conduction Interference in IGBT series structure converter
Author :
Gu, Zao-Gen ; Wen, Chuan-Xin ; Zhao, Xiao-dong ; Di, Wu
Author_Institution :
Power Electronics Dept., China Electric Power Research Institute, No.8 Nanrui Rd., Nanjing 210003, China
Volume :
1
fYear :
2012
fDate :
2-5 June 2012
Firstpage :
673
Lastpage :
677
Abstract :
The transmission path of the Conduction Interference is proposed after analyzing the converter valve´s mechanism of the noise emission. Using the Fourier transformation theory to get the spectrum of the converter´s Common mode voltage and Differential mode voltage by the two different modulation methods (SPWM and SVPWM), as well as the dead time affects on the Emission. It´s conclude that the IGBT´s characterized model, the parasitic parameter extraction and the controller model are all make great contributed to the precise of the forecast result. The simulations based on ANSOFT indicate the reliability of the model and the formulas of spatial frequency spectrum.
Keywords :
Electromagnetic interference; Inductance; Insulated gate bipolar transistors; Noise; Pulse width modulation; Switches; EMI; PWM; characterized model; converter; dead time; parasitic parameter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Motion Control Conference (IPEMC), 2012 7th International
Conference_Location :
Harbin, China
Print_ISBN :
978-1-4577-2085-7
Type :
conf
DOI :
10.1109/IPEMC.2012.6258826
Filename :
6258826
Link To Document :
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