DocumentCode :
566230
Title :
Chip-level TSV integration for rapid prototyping of 3D system LSIs
Author :
Hozawa, Kazuyuki ; Furuta, Futoshi ; Hanaoka, Yuko ; Aoki, Mayu ; Takeda, Kenichi ; Sakuma, Katsuyuki ; Lee, Kang Wook ; Fukushima, Takafumi ; Koyanagi, Mitsumasa
Author_Institution :
Assoc. of Super-Adv. Electron. Technol. (ASET), Tokyo, Japan
fYear :
2012
fDate :
Jan. 31 2012-Feb. 2 2012
Firstpage :
1
Lastpage :
4
Abstract :
For rapid prototyping of system LSIs based on three-dimension (3D) integration using through-silicon-vias (TSVs), a TSV fabrication technology for a diced chip with copper/low-k interconnections (called “chip-level TSV integration”) was developed. The two key processes of this technology are uniform substrate thinning in chip form and via-last TSV formation for nanometer-sized copper/low-k interconnection. Chip-level TSV integration will provide rapid prototyping of 3D system LSIs based on various chips with TSVs.
Keywords :
large scale integration; rapid prototyping (industrial); three-dimensional integrated circuits; 3D integration; 3D system LSI; TSV fabrication technology; TSV formation; chip level TSV integration; diced chip; rapid prototyping; substrate thinning; through silicon vias; Copper; Films; Resistance; Silicon; Through-silicon vias; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
3D Systems Integration Conference (3DIC), 2011 IEEE International
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-2189-1
Type :
conf
DOI :
10.1109/3DIC.2012.6262952
Filename :
6262952
Link To Document :
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