DocumentCode :
566231
Title :
Impact of containment and deposition method on sub-micron chip-to-wafer self-assembly yield
Author :
Mermoz, S. ; Sanchez, L. ; Cioccio, L. Di ; Berthier, J. ; Deloffre, E. ; Fretigny, C.
Author_Institution :
LETI, CEA, Grenoble, France
fYear :
2012
fDate :
Jan. 31 2012-Feb. 2 2012
Firstpage :
1
Lastpage :
5
Abstract :
3D technologies need a high speed high alignment accuracy chip-to-wafer hybridation technique. This paper will focus on chip-to-wafer self assembly processes coupled with direct bonding hybridation. Submicronic alignment accuracy and a 90 per cent self-assembly process yield are obtained. The self-assembly process yield is analyzed in term of alignment accuracy and direct bonding quality. The impact of the chip´s surface state (hydrophilic, hydrophobic, and mixed) on fluid containment efficiency and self-assembly process yield will be discussed. Topological containment (canthotaxis effect) is also evaluated with regards to structures height. Finally, the alignment yield as a function of deposition parameters will be described.
Keywords :
hydrophilicity; hydrophobicity; integrated circuit bonding; self-assembly; three-dimensional integrated circuits; topology; wafer-scale integration; 3D technologies; canthotaxis effect; chip surface state; chip-to-wafer hybridation technique; containment method; deposition method; deposition parameters; direct bonding hybridation; direct bonding quality; fluid containment efficiency; high speed high alignment; submicron chip-to-wafer self-assembly yield; submicronic alignment accuracy; topological containment; Accuracy; Bonding; Liquids; Self-assembly; Silicon; Surface treatment; 3D integration; Chip-to-wafer; alignment accuracy; chip-to-chip; deposition method; direct bonding; hybridation; self-assembly;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
3D Systems Integration Conference (3DIC), 2011 IEEE International
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-2189-1
Type :
conf
DOI :
10.1109/3DIC.2012.6262953
Filename :
6262953
Link To Document :
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