Characterization of local strain around trough silicon via interconnects in wafer-on-wafer structures

Author

Nakatsuka, Osamu ; Kitada, Hideki ; Kim, Young Suk ; Mizushima, Yoriko ; Nakamura, Tomoji ; Ohba, Takayuki ; Zaima, Shigeaki

Author_Institution

Nagoya Univ., Nagoya, Japan

fYear

2012

fDate

Jan. 31 2012-Feb. 2 2012

Firstpage

1

Lastpage

4

Abstract

We have investigated the local strain structures of thin Si layer including through Si via (TSV) interconnects prepared with wafer-on-wafer technology. Microdiffraction measurement reveals the misorientation of the thin Si layer on a Si substrate. Microdiffraction also realizes that the separation of strain component in the thin Si layer. We found the anisotropic structure of local strain in the thin Si layer between TSV interconnects.

Keywords

X-ray diffraction; elemental semiconductors; integrated circuit interconnections; silicon; three-dimensional integrated circuits; wafer-scale integration; Si; TSV interconnects; XRD; anisotropic structure; local strain structures; microdiffraction measurement; misorientation; strain component; thin Si layer; through silicon via interconnects; wafer-on-wafer structures; Diffraction; Silicon; Strain; Substrates; Through-silicon vias; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

3D Systems Integration Conference (3DIC), 2011 IEEE International

Conference_Location

Osaka

Print_ISBN

978-1-4673-2189-1

Type

conf

DOI

10.1109/3DIC.2012.6262971

Filename

6262971