Title :
200°C direct bonding copper interconnects : Electrical results and reliability
Author :
Di Cioccio, L. ; Taibi, R. ; Chappaz, C. ; Moreau, S. ; Chapelon, L.L. ; Signamarchei, T.
Author_Institution :
CEA LETI - Minatec, Grenoble, France
fDate :
Jan. 31 2012-Feb. 2 2012
Abstract :
Copper direct bonding is one of the most promising approaches for three dimensional integrated circuits (3D IC). This process has reached a maturity already reported in publications for wafer to wafer and die to wafer stacking. Anyway, its reliability has to be demonstrated. In this paper Electromigration (EM) and Stress Induced Voiding (SIV) tests are also performed on 200°C bonded daisy chains to investigate the reliability behaviour of such structures, first electrical tests on bonded dies is also reported.
Keywords :
bonding processes; copper; electromigration; integrated circuit interconnections; integrated circuit reliability; three-dimensional integrated circuits; 3D IC; Cu; die to wafer stacking; direct bonding copper interconnects; electromigration; integrated circuit reliability; stress induced voiding tests; temperature 200 degC; three dimensional integrated circuits; wafer to wafer stacking; Annealing; Bonding; Copper; Electromigration; Reliability; Resistance; Stress; 3D integration; Chip-to-wafer; copper direct bonding; hydridation; reliability; wafer-to-wafer;
Conference_Titel :
3D Systems Integration Conference (3DIC), 2011 IEEE International
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-2189-1
DOI :
10.1109/3DIC.2012.6262976
