200°C direct bonding copper interconnects : Electrical results and reliability

Author

Di Cioccio, L. ; Taibi, R. ; Chappaz, C. ; Moreau, S. ; Chapelon, L.L. ; Signamarchei, T.

Author_Institution

CEA LETI - Minatec, Grenoble, France

fYear

2012

fDate

Jan. 31 2012-Feb. 2 2012

Firstpage

1

Lastpage

4

Abstract

Copper direct bonding is one of the most promising approaches for three dimensional integrated circuits (3D IC). This process has reached a maturity already reported in publications for wafer to wafer and die to wafer stacking. Anyway, its reliability has to be demonstrated. In this paper Electromigration (EM) and Stress Induced Voiding (SIV) tests are also performed on 200°C bonded daisy chains to investigate the reliability behaviour of such structures, first electrical tests on bonded dies is also reported.

Keywords

bonding processes; copper; electromigration; integrated circuit interconnections; integrated circuit reliability; three-dimensional integrated circuits; 3D IC; Cu; die to wafer stacking; direct bonding copper interconnects; electromigration; integrated circuit reliability; stress induced voiding tests; temperature 200 degC; three dimensional integrated circuits; wafer to wafer stacking; Annealing; Bonding; Copper; Electromigration; Reliability; Resistance; Stress; 3D integration; Chip-to-wafer; copper direct bonding; hydridation; reliability; wafer-to-wafer;

fLanguage

English

Publisher

ieee

Conference_Titel

3D Systems Integration Conference (3DIC), 2011 IEEE International

Conference_Location

Osaka

Print_ISBN

978-1-4673-2189-1

Type

conf

DOI

10.1109/3DIC.2012.6262976

Filename

6262976