Title :
High temperature bonding solutions enabling thin wafer process and handling on 3D-IC manufacturing
Author :
Itabashi, Toshiaki ; Kotani, Masashi ; Zussman, Melvin P. ; Zoschke, K. ; Fischer, T. ; Töpper, M. ; Ishida, Hiroyuki
Author_Institution :
Hitachi Chem. DuPont Microsyst. Ltd., Tokyo, Japan
fDate :
Jan. 31 2012-Feb. 2 2012
Abstract :
Most advanced IC devices including packaging and substrates are requiring smart solution for wafer thinning/handling as well as stacking techniques to enhance performance and/or achieving ultimate assembling density. However existence thinning and handling technique or materials are facing difficulties in case of stand under high temperature or aggressive chemicals during processing e.g. via formation, insulation, via filling and stacking for 3D-assembling. In stead of them, an idea is applying high temperature and chemical resistant polyimide base temporary / permanent bonding adhesives to the series of process for eliminating difficulties. This paper presents assembly techniques and results which can be adopted for multiple types of advanced device and 3D-IC/module manufacturing.
Keywords :
adhesive bonding; assembling; high-temperature techniques; insulation; integrated circuit manufacture; three-dimensional integrated circuits; vias; wafer bonding; wafer level packaging; 3D-IC manufacturing; 3D-assembling stacking; advanced IC devices; aggressive chemicals; assembling density; chemical resistant polyimide base permanent bonding adhesives; chemical resistant polyimide base temporary bonding adhesives; high temperature bonding solutions; insulation; smart solution; stacking techniques; thin wafer handling; thin wafer process; via filling; via formation; wafer thinning; Bonding; Chemicals; Films; Polyimides; Stacking; Substrates;
Conference_Titel :
3D Systems Integration Conference (3DIC), 2011 IEEE International
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-2189-1
DOI :
10.1109/3DIC.2012.6263003
