Title :
Low-temperature bonding of LSI chips to PEN film using Au cone bump for heterogeneous integration
Author :
Shuto, Takanori ; Watanabe, Naoya ; Ikeda, Akihiro ; Asano, Tanemasa
Author_Institution :
Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
fDate :
Jan. 31 2012-Feb. 2 2012
Abstract :
We show that interconnection bonding of LSI chip to metallization on poly(ethylene naphthalate) (PEN) film can be realized by using cone-shaped compliant bump. We have investigated two designs of the counter electrode. One is simple metal pad electrode and the other is an electrode in which cross-shaped slit was formed. The bonding between the cone-shaped bump and the simple pad electrode was found to be realized at 150°C. More than 10,000 connections with about 100 mΩ/bump were formed. When the cross-shaped slit was employed, room-temperature bonding was achieved.
Keywords :
electrodes; gold; integrated circuit bonding; integrated circuit interconnections; integrated circuit metallisation; large scale integration; polymer films; Au; LSI chips; PEN film; cone-shaped compliant bump; counter electrode; heterogeneous integration; interconnection bonding; low-temperature bonding; metal pad electrode; metallization; poly(ethylene naphthalate); room-temperature bonding; temperature 150 degC; temperature 293 K to 298 K; Bonding; Electrodes; Films; Gold; Nickel; Plasma temperature; Silicon;
Conference_Titel :
3D Systems Integration Conference (3DIC), 2011 IEEE International
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-2189-1
DOI :
10.1109/3DIC.2012.6263012
