Title :
Effect of planarity on the 3D integration in 3-D integrated CMOS image sensor
Author :
Kwon, Nam Hee ; Hong, S.M. ; Cha, Yong-Won ; Lee, Sun Jae ; Lee, Han Gyul ; Kim, Areum ; Kim, Soo Won ; Kim, Chang Hyun ; Pyo, Sung Gyu
Author_Institution :
Dept. of Nano Bio & Energy Eng., Chungang Univ., Seoul, South Korea
fDate :
Jan. 31 2012-Feb. 2 2012
Abstract :
In this work, some of the tradeoffs that need to be considered in optimizing a back-illuminated (BSI) sensor were described. The manufacturing feasibility of a BSI CMOS image sensor was demonstrated and compared between the front-illuminated (FSI) and back-illuminated (BSI) versions of the sensor with the same fabrication process. 3D integration processes were evaluated to get stable performance of BSI CMOS image sensor.The broadband quantum efficiency (81% for BSI) improved 2.7 times over FSI sensitivity.
Keywords :
CMOS image sensors; circuit optimisation; integrated circuit bonding; three-dimensional integrated circuits; 3D integrated BSI CMOS image sensor; 3D integration processes; FSI sensor; back illuminated image sensor; broadband quantum efficiency; efficiency 81 percent; front-illuminated sensor; manufacturing feasibility; planarity effect;
Conference_Titel :
3D Systems Integration Conference (3DIC), 2011 IEEE International
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-2189-1
DOI :
10.1109/3DIC.2012.6263018
