Title :
System level evaluation of Silicon imager based see-through Silicon application
Author :
Zhou, Wei ; Max, Guest ; Hart, Darcy
Author_Institution :
Rudolph Technol. Inc., Bloomington, MN, USA
fDate :
Jan. 31 2012-Feb. 2 2012
Abstract :
This paper first reviews the novel technology which enables the silicon based imagers (CCD or CMOS) for see-through silicon inspection applications; then discusses a comprehensive mathematical model to simulate the inspection platform performances (resolution, throughput and cost) based on InGaAs cameras and Silicon cameras; at the end the feasibility and advantages of silicon imagers based inspection platforms for see-through silicon inspection applications is summarized.
Keywords :
CCD image sensors; III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; inspection; silicon; CCD; CMOS; InGaAs; InGaAs cameras; Si; inspection platform; see-through silicon inspection; silicon cameras; silicon imagers; system level evaluation; Cameras; Image resolution; Indium gallium arsenide; Inspection; Signal to noise ratio; Silicon; Throughput;
Conference_Titel :
3D Systems Integration Conference (3DIC), 2011 IEEE International
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-2189-1
DOI :
10.1109/3DIC.2012.6263020
