Modeling and compare of through-silicon-via (TSV) in high frequency

In this work, we modeled three Cu-plug through silicon vias (TSVs). The three coaxial TSVs are based on the coaxial transmission line and are simulated using two methods. The first method is using an EM field solver such as HFSS. The second method is derived from a set of analytical resistance-inductance-capacitance-conductance (RLCG) equations derived from the physical dimensions of the three coaxial TSVs. The accuracy of the proposed analytical RLCG models is determined when the S parameters and individual RLCG results of the HFSS models is compared to the results of the S parameters and proposed analytical RLCG models. The results reveal that coaxial TSV is capable of suppressing undesirable substrate loss as well as provide good impedance matching. The variations of C and G parameters are identified and can be improved given a proposed assumption made in this paper.