Title :
Analysis of power losses in voltage source converter with new generation IGBTs
Author :
Wu, Rui ; Wen, JiaLiang ; Wu, Jing ; Chen, Zhongyuan ; Peng, Chang ; Wang, Yu
Author_Institution :
China Electr. Power Res. Inst. (CEPRI), Beijing, China
Abstract :
This paper introduced the structure of new generation IGBTs(Insulated Gate Bipolar Transistor), such as Trench-Gate + Field Stop(FS) IGBT of Infineon, and Soft-Punch-Through(SPT) and Soft-Punch-Through-Plus(SPT+) IGBT of ABB. It also compared the characteristics. Then this paper calculated and discussed the power losses of voltage source converter(VSC) with these new generation IGBTs. The results showed that using new generation IGBTs can lead to relatively low power losses.
Keywords :
insulated gate bipolar transistors; power convertors; ABB; Infineon; field stop IGBT; insulated gate bipolar transistor; new generation IGBT; power losses; soft-punch-through-plus IGBT; trench-gate IGBT; voltage source converter; Insulated gate bipolar transistors; Modulation; Power conversion; Switches; Switching frequency; Switching loss; Field Stop(FS); Insulated Gate Bipolar Transistors(IGBT); Soft-Punch-Through plus(SPT+); power loss; voltage source converter(VSC);
Conference_Titel :
Computer Science and Automation Engineering (CSAE), 2012 IEEE International Conference on
Conference_Location :
Zhangjiajie
Print_ISBN :
978-1-4673-0088-9
DOI :
10.1109/CSAE.2012.6272683
