DocumentCode
567126
Title
Gas-sens characteristics research of Al/CuPc/Cu Schottky diode
Author
Pang, Chao ; Wang, Dongxing ; Wang, Xiao Lin ; Wang, Changhao ; Yin, Jinghua ; Zhao, Hong
Author_Institution
Dept. of Electron. Sci. & Technol., Harbin Univ. of Sci. & Technol., Harbin, China
Volume
1
fYear
2012
fDate
18-20 May 2012
Firstpage
428
Lastpage
431
Abstract
In this paper, evidence is provided that an organic Al/CuPc/Cu shottky diode can be used as a novel gas sensor. This device is simple manufacturing process, lower costs, and shows good Schottky characteristics. Its structure includes three layers that are Al/CuPc/Cu. The sensitive feature of the device is characterized, through researching the change of electric properties in NO2 gas. The results of the study indicate that the current of device increased obviously along with the 10ppm NO2 gas is accessed to. The potential barrier height in air and NO2 gas is calculated and compared. The results the potential barrier height of CuPc/Al reduced by 60meV.
Keywords
CuPc; Potential barrier height; sensitivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Measurement, Information and Control (MIC), 2012 International Conference on
Conference_Location
Harbin, China
Print_ISBN
978-1-4577-1601-0
Type
conf
DOI
10.1109/MIC.2012.6273334
Filename
6273334
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