Pulsed green laser beam a-Si crystallization and long line beam generation for LCD and OLED TFT-panels manufacturing

Author

Burghardt, Berthold ; Richter, Johannes ; Park, Jong Kab ; Kahlert, Hans-Jürgen

Author_Institution

INNOVAVENT GmbH, Gottingen, Germany

fYear

2012

fDate

4-6 July 2012

Firstpage

33

Lastpage

36

Abstract

Green laser annealing (GLA) by pulsed solid state lasers offers a variety of options to prepare a-Si thin films for TFT (thin film transistors) flat panel display applications. Recent investigations have shown that the green wavelength can be applied at medium energy density in the range of 300-500mJ/cm² using a 60-150ns laser pulse. The crystallization leads to p-Si material which is comparable to the near complete melt ELA material which is widely used in the display industry.

Keywords

amorphous semiconductors; crystallisation; elemental semiconductors; flat panel displays; laser beam annealing; liquid crystal displays; organic light emitting diodes; semiconductor thin films; silicon; solid lasers; thin film transistors; ELA material; LCD-panels manufacturing; OLED TFT-panels manufacturing; Si; TFT flat panel display; crystallization; energy density; long line beam generation; pulsed green laser beam annealing; thin films; time 60 ns to 150 ns; Absorption; Films; Green products; Laser beams; Optics; Solid lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294826