Current status and future challenge of oxide semiconductors

Author

Hosono, Hideo

Author_Institution

Mater. & Struct. Lab., Tokyo Inst. of Technol., Yokohama, Japan

fYear

2012

fDate

4-6 July 2012

Firstpage

1

Lastpage

4

Abstract

This paper describes my personal view on several hot issues in oxide semiconductors for AM-FPD applications. Topics to be discussed are origin and mechanism for negative bias illumination stress (NBIS) instability of a-IGZO-TFTs, impurity effects, down-sized TFTs and bipolar oxide TFTs. I propose a model for explaining the origin, depth distribution of the large subgap state density above the conduction band maximum. Importance of oxide semiconductors with a small indirect gap is addresses to realize c-MOS based on the band alignment of SnO which was demonstrated to operate as a bipolar TFT.

Keywords

conduction bands; gallium compounds; impurity states; indium compounds; thin film transistors; zinc compounds; AM-FPD applications; InGaZnO; NBIS instability; SnO band alignment; a-IGZO-TFT; bipolar TFT; bipolar oxide TFT; c-MOS based SnO; conduction band maximum; down-sized TFT; impurity effects; large subgap state density; negative bias illumination stress; oxide semiconductors; small indirect gap; IP networks; Impurities; Materials; Metals; Photonic band gap; Plasma temperature; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294843