DocumentCode :
567961
Title :
Characteristics of ZnO/Al/ZnO multilayers on glass with different ZnO film thicknesses prepared by cathodic vacuum arc deposition
Author :
Huang, Chien-Wei ; Pan, Cheng-Tang ; Yang, Ru-Yuan
Author_Institution :
Dept. of Mech. & Electron-Mech. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear :
2012
fDate :
4-6 July 2012
Firstpage :
91
Lastpage :
94
Abstract :
In this paper, the characteristics of the transparent ZnO/Al(10 nm)/ZnO multilayered films on glass substrate with different ZnO film thickness (50, 100, 150 and 200 nm) were investigated. The ZnO films were deposited using cathodic arc plasma technique at a low temperature (<;75°C). Microstructure, optical and electrical properties were investigated and discussed. The multilayered films showed a high orientation of (002) peak. An average transmittance around 70 % in the visible region and the lowest resistivity around 4.02×10-4 Ω-cm could be achieved for the ZnO(50 nm)/Al(10 nm)/ZnO (50 nm) multilayered film.
Keywords :
II-VI semiconductors; aluminium; electrical resistivity; multilayers; plasma deposition; semiconductor-metal boundaries; transparency; vacuum deposition; visible spectra; wide band gap semiconductors; zinc compounds; (002) peak orientation; SiO2; ZnO film thicknesses; ZnO-Al-ZnO; ZnO-Al-ZnO multilayers; average transmittance; cathodic arc plasma technique; cathodic vacuum arc deposition; electrical properties; glass substrate; microstructure; optical properties; resistivity; size 10 nm; size 50 nm to 200 nm; transparency; visible region; Conductivity; Glass; Nonhomogeneous media; Optical films; Substrates; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
Type :
conf
Filename :
6294849
Link To Document :
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