Title :
The uniform crystallization process towards the bottom-gated LTPS TFT back-plane technology for large-sized AM-OLED displays by CW green laser annealing
Author :
Sugawara, Yuuta ; Oda, Tomohiko ; Saitoh, Tohru ; Komori, Kazunori
Author_Institution :
Image Devices Dev. Center, Panasonic Corp., Kyoto, Japan
Abstract :
Issues resulting from the fabrication of bottom-gated LTPS back-planes using large substrates by CW-GLA were overcome by novel design of a-Si and gate insulator thickness making use of thermal and optical simulation. By this, uniform crystallization on gate electrodes and stable TFT characteristics under fluctuation of film thickness became realized.
Keywords :
LED displays; amorphous semiconductors; crystallisation; electrodes; elemental semiconductors; fluctuations; laser beam annealing; organic light emitting diodes; semiconductor device models; semiconductor thin films; silicon; thin film transistors; CW green laser annealing; Si; a-Si thickness design; bottom-gated LTPS TFT back-plane technology; bottom-gated LTPS back-plane fabrication; film thickness fluctuation; gate electrodes; gate insulator thickness design; large substrates; large-sized AM-OLED displays; optical simulation; stable TFT characteristics; thermal simulation; uniform crystallization process; Capacitance; Crystallization; Electrodes; Films; Logic gates; Substrates; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
