The uniform crystallization process towards the bottom-gated LTPS TFT back-plane technology for large-sized AM-OLED displays by CW green laser annealing

Author

Sugawara, Yuuta ; Oda, Tomohiko ; Saitoh, Tohru ; Komori, Kazunori

Author_Institution

Image Devices Dev. Center, Panasonic Corp., Kyoto, Japan

fYear

2012

fDate

4-6 July 2012

Firstpage

115

Lastpage

118

Abstract

Issues resulting from the fabrication of bottom-gated LTPS back-planes using large substrates by CW-GLA were overcome by novel design of a-Si and gate insulator thickness making use of thermal and optical simulation. By this, uniform crystallization on gate electrodes and stable TFT characteristics under fluctuation of film thickness became realized.

Keywords

LED displays; amorphous semiconductors; crystallisation; electrodes; elemental semiconductors; fluctuations; laser beam annealing; organic light emitting diodes; semiconductor device models; semiconductor thin films; silicon; thin film transistors; CW green laser annealing; Si; a-Si thickness design; bottom-gated LTPS TFT back-plane technology; bottom-gated LTPS back-plane fabrication; film thickness fluctuation; gate electrodes; gate insulator thickness design; large substrates; large-sized AM-OLED displays; optical simulation; stable TFT characteristics; thermal simulation; uniform crystallization process; Capacitance; Crystallization; Electrodes; Films; Logic gates; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294857