Influence of overlap scanning on TFT properties with continuous wave green laser annealing crystallization

Author

Oda, Tomohiko ; Sugawara, Yuuta ; Saitoh, Tohru ; Komori, Kazunori

Author_Institution

Image Devices Dev. Center, Panasonic Corp., Kyoto, Japan

fYear

2012

fDate

4-6 July 2012

Firstpage

119

Lastpage

122

Abstract

The influence of overlap scanning on TFT properties was investigated using 532 nm YAG-SHG continuous wave laser annealing. The mobility keeps almost constant value against the repeatedly scanning of 532 nm laser beam on the same TFT, in contrast with the conventional 308 nm ELA where the mobility increases with scanning number. This can be explained by a drastic difference of absorption coefficient of 532 nm laser between amorphous and poly Si. Variability of mobility in the TFT array crystallized by overlap scanning of 532 nm laser was confirmed to be small enough for practical use, which shows the potential of this technology for fabricating large size AM-OLED backplanes.

Keywords

absorption coefficients; amorphous semiconductors; crystallisation; elemental semiconductors; laser beam annealing; organic light emitting diodes; silicon; thin film transistors; AM-OLED backplanes; Si; TFT; absorption coefficient; amorphous Si; continuous wave green laser annealing crystallization; overlap scanning; wavelength 532 nm; Absorption; Annealing; Crystallization; Image edge detection; Laser beams; Silicon; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294858