Title :
Influence of overlap scanning on TFT properties with continuous wave green laser annealing crystallization
Author :
Oda, Tomohiko ; Sugawara, Yuuta ; Saitoh, Tohru ; Komori, Kazunori
Author_Institution :
Image Devices Dev. Center, Panasonic Corp., Kyoto, Japan
Abstract :
The influence of overlap scanning on TFT properties was investigated using 532 nm YAG-SHG continuous wave laser annealing. The mobility keeps almost constant value against the repeatedly scanning of 532 nm laser beam on the same TFT, in contrast with the conventional 308 nm ELA where the mobility increases with scanning number. This can be explained by a drastic difference of absorption coefficient of 532 nm laser between amorphous and poly Si. Variability of mobility in the TFT array crystallized by overlap scanning of 532 nm laser was confirmed to be small enough for practical use, which shows the potential of this technology for fabricating large size AM-OLED backplanes.
Keywords :
absorption coefficients; amorphous semiconductors; crystallisation; elemental semiconductors; laser beam annealing; organic light emitting diodes; silicon; thin film transistors; AM-OLED backplanes; Si; TFT; absorption coefficient; amorphous Si; continuous wave green laser annealing crystallization; overlap scanning; wavelength 532 nm; Absorption; Annealing; Crystallization; Image edge detection; Laser beams; Silicon; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
