Physical properties of amorphous In-Ga-Zn-O films deposited under various sputtering pressure

Author

Yasuno, Satoshi ; Kita, Takashi ; Morita, Shinya ; Hino, Aya ; Hayashi, Kazushi ; Kugimiya, Toshihiro

Author_Institution

Electron. Div., KOBELCO Res. Inst., Inc., Kobe, Japan

fYear

2012

fDate

4-6 July 2012

Firstpage

147

Lastpage

150

Abstract

The physical properties of amorphous In-Ga-Zn-O (a-IGZO) films deposited by DC sputtering with various sputtering pressure were investigated. In accordance with improvement of the transistor performances such as saturation mobility (μ_SAT) and sub-threshold swing with a lowering the sputter pressure, we found that the sputtering pressure affected various physical properties of a-IGZO film. The lower sputtering pressure caused a film densification, a decreasing the surface roughness and small hydrogen concentration in the films.

Keywords

amorphous semiconductors; densification; gallium compounds; indium compounds; semiconductor thin films; sputter deposition; surface roughness; thin film transistors; zinc compounds; DC sputtering; InGaZnO; amorphous InGaZnO films; film densification; hydrogen concentration; physical properties; saturation mobility; sputtering pressure; subthreshold swing; surface roughness; transistor performance improvement; Annealing; Films; Hydrogen; Semiconductor device measurement; Sputtering; Temperature measurement; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294865