Title :
Influence of active layer thickness on performance and reliability of InSnZnO thin-film transistors
Author :
Wang, Dapeng ; Li, Chaoyang ; Furuta, Mamoru ; Tomai, Shigekazu ; Sunagawa, Misa ; Nishimura, Mami ; Kawashima, Emi ; Kasami, Masashi ; Yano, Koki
Author_Institution :
Inst. for Nanotechnol., Kochi Univ. of Technol., Kami, Japan
Abstract :
The bottom-gate amorphous InSnZnO (a-ITZO) thin-film-transistors (TFTs) with various channel thicknesses were fabricated to investigate the effect of an active layer thickness on performance and reliability of the TFTs. The a-ITZO TFTs showed the excellent electrical performance such as field effect mobility (21.7-51.7 cm2 v-1 s-1) and subthreshold swing (0.19-0.35 V/decade). It was found that the area density of traps decreased as the channel thickness increased. After applying a positive gate bias stress, the threshold voltage shift decreased when the channel layer thickness increased. In contrast, after applying a negative gate bias stress little thickness dependence of the threshold voltage shift, was observed.
Keywords :
amorphous semiconductors; indium compounds; semiconductor device reliability; semiconductor thin films; thin film transistors; tin compounds; zinc compounds; InSnZnO; InSnZnO thin-film transistor performance; InSnZnO thin-film transistor reliability; active layer thickness effect; bottom-gate amorphous InSnZnO thin-film-transistors; channel layer thickness; electrical performance; field effect mobility; negative gate bias stress; positive gate bias stress; subthreshold swing; thickness dependence; threshold voltage shift; trap area density; Electric variables measurement; Logic gates; Reliability; Semiconductor device measurement; Stress; Temperature measurement; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
