Title :
Highly reliable a-IGZO TFTs with SiNX gate insulator deposited by SiF4/N2
Author :
Yamazaki, Haruka ; Fujii, Mami ; Ueoka, Yoshihiro ; Ishikawa, Yasuaki ; Fujiwara, Masaki ; Takahashi, Eiji ; Uraoka, Yukiharu
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Nara, Japan
Abstract :
We fabricated highly reliable a-InGaZnO thin film transistors (TFTs) with new silicon nitride (SiNX) gate insulator (GI) fabricated by SiF4/N2 at low temperature (150°C). This new SiNX layer has low hydrogen content which is controlled by the source gases, and hydrogen gas flow rate ratio to SiF4 was changed as 0%, 1%, and 8% to change the hydrogen content in the film. The bias-stress-induced threshold voltage instabilities on the three kinds of TFTs kept quite low value. We found that the improvement for threshold voltage instabilities was not due to the effect of the hydrogen. It is assumed that fluorine in the film, which originates in the source gas, has possibility to improve the reliability.
Keywords :
II-VI semiconductors; amorphous semiconductors; gallium compounds; indium compounds; plasma CVD; semiconductor device reliability; semiconductor growth; semiconductor thin films; silicon compounds; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO-SiNx; bias-stress-induced threshold voltage instability; gate insulator; highly reliable thin film transistors; hydrogen gas flow rate ratio; reliable a-IGZO TFT; temperature 150 degC; Films; Hydrogen; Insulators; Logic gates; Stress; Thin film transistors; Threshold voltage;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
