Title :
The effects of passivation layer on the electrical stability of flexible In-Ga-Zn-O thin film transistors on plastic substrate
Author :
Kuk, Seung-Hee ; Song, Moon-Kyu ; Kwon, Seyeoul ; Youn, Sang Cheon ; Park, Weon Seo ; Yoon, Soo-Young ; Han, Min-Koo
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
Abstract :
We have investigated effects of passivation layer on the electrical stability of Indium-Gallium-Zinc-Oxide thin-film transistors with single passivation layer and double passivation layer fabricated on plastic substrate. The positive bias stress and negative bias stress were applied to the IGZO TFTs at various temperatures from 20°C to 80°C. The threshold voltage shift of double passivation device was larger than that of single passivation device under NBTS. The threshold voltage shift of double passivation device was slightly less than that of single passivation device under PBTS. The threshold voltage shift of NBTS is considerably increased than that of PBTS at high temperature due to the difference between conduction band offset and valence band offset.
Keywords :
conduction bands; flexible electronics; gallium compounds; indium compounds; passivation; semiconductor materials; semiconductor thin films; thin film transistors; valence bands; zinc compounds; InGaZnO; conduction band offset; double passivation device; double passivation layer; electrical stability; flexible indium-gallium-zinc-oxide thin film transistors; negative bias stress; passivation layer effects; plastic substrate; positive bias stress; single passivation device; single passivation layer; temperature 20 degC to 80 degC; threshold voltage shift; valence band offset; Hydrogen; Ions; Passivation; Plasma temperature; Stress; Thin film transistors; Threshold voltage;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
