Title :
Effects of gate insulator on thin film transistor with ZnO channel layer deposited by plasma assisted atomic layer deposition
Author :
Kawamura, Yumi ; Horita, Masahiro ; Ishikawa, Yasuaki ; Uraoka, Yukiharu
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan
Abstract :
We investigated zinc oxide (ZnO) thin films prepared by plasma assisted atomic layer deposition (PA-ALD), and thin-film transistors (TFTs) with ALD ZnO channel layer for application in next-generation displays. In this study, we investigated the effects of the gate insulator properties on the performance of TFTs with a ZnO channel layer deposited by PA-ALD. The TFTs with Al2O3 gate insulator indicated high performance (5.1 cm2/Vs field effect mobility) without any thermal annealing. This result indicated a high-performance ZnO TFT with the films deposited by PA-ALD can be obtained at temperature below 100°C.
Keywords :
II-VI semiconductors; aluminium compounds; annealing; atomic layer deposition; plasma deposition; semiconductor growth; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds; PA-ALD; ZnO channel layer; ZnO-Al2O3; field effect mobility; gate insulator effects; plasma assisted atomic layer deposition; thermal annealing; thin film transistor; thin films; Aluminum oxide; Films; Insulators; Logic gates; Plasmas; Thin film transistors; Zinc oxide;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
