Effects of gate insulator on thin film transistor with ZnO channel layer deposited by plasma assisted atomic layer deposition

Author

Kawamura, Yumi ; Horita, Masahiro ; Ishikawa, Yasuaki ; Uraoka, Yukiharu

Author_Institution

Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan

fYear

2012

fDate

4-6 July 2012

Firstpage

179

Lastpage

182

Abstract

We investigated zinc oxide (ZnO) thin films prepared by plasma assisted atomic layer deposition (PA-ALD), and thin-film transistors (TFTs) with ALD ZnO channel layer for application in next-generation displays. In this study, we investigated the effects of the gate insulator properties on the performance of TFTs with a ZnO channel layer deposited by PA-ALD. The TFTs with Al₂O₃ gate insulator indicated high performance (5.1 cm²/Vs field effect mobility) without any thermal annealing. This result indicated a high-performance ZnO TFT with the films deposited by PA-ALD can be obtained at temperature below 100°C.

Keywords

II-VI semiconductors; aluminium compounds; annealing; atomic layer deposition; plasma deposition; semiconductor growth; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds; PA-ALD; ZnO channel layer; ZnO-Al₂O₃; field effect mobility; gate insulator effects; plasma assisted atomic layer deposition; thermal annealing; thin film transistor; thin films; Aluminum oxide; Films; Insulators; Logic gates; Plasmas; Thin film transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294874