Scaling of a-InGaZnO TFTs and pixel electrode for AM-LCDs

Author

Baek, Gwanghyeon ; Abe, Katsumi ; Kumomi, Hideya ; Kanicki, Jerzy

Author_Institution

Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

fYear

2012

fDate

4-6 July 2012

Firstpage

13

Lastpage

16

Abstract

The channel length (L) and width (W) scaling behavior of amorphous In-Ga-Zn-O thin-film transistors (TFTs) have been investigated. The fabricated TFTs have a mobility of ~12 cm²/V-s, sub-threshold slope (S) of ~110 mV/decade, threshold voltage around 0.3 V and off-current below 10^-13 A. Even though the TFTs with smaller channel length (L ≤ 5 μm) show proper switching characteristics, threshold voltage lowering and sub-threshold slope degradation are observed, while off-current and mobility are not changed. The mobility degradation with L, which was observed in amorphous silicon TFTs, is not seen for short channel a-IGZO TFTs. Lastly, the necessity of the TFT scaling for a pixel electrode in AM-LCD applications is discussed.

Keywords

amorphous semiconductors; gallium compounds; indium compounds; liquid crystal displays; semiconductor thin films; thin film transistors; zinc compounds; AM-LCD applications; InGaZnO; amorphous In-Ga-Zn-O thin-film transistor scaling; channel length scaling behavior; channel width scaling behavior; mobility degradation; off-current; pixel electrode scaling; short channel amorphous In-Ga-Zn-O thin-film transistors; subthreshold slope degradation; switching characteristics; threshold voltage lowering; Degradation; Electrodes; Hydrogen; Logic gates; Resistance; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294877