Fabrication and characterization of thin-film transistor using dielectrophoretic assembly of single-walled carbon nanotube

Author

Toda, Tatsuya ; Kawaharamura, Toshiyuki ; Furusawa, Hiroshi ; Furuta, Mamoru

Author_Institution

Sch. of Environ. Sci. & Eng., Kochi Univ. of Technol., Kami, Japan

fYear

2012

fDate

4-6 July 2012

Firstpage

191

Lastpage

194

Abstract

A single-walled carbon nanotube thin-film transistor (SWNT TFT) was formed using aligned SWNT channels assembled by the dielectrophoretic (DEP) process. The density of assembled SWNTs was controlled by the DEP factors (concentration of SWNT solution and applied AC voltage). The on/off current ratio of the SWNT TFT was improved by decreasing SWNT density in a channel-achieved 4.0 × 10⁵-while the motility and on/off ratio still showed a reversible manner. DEP assembly is an effective method to achieve well-aligned and density-controlled SWNT channels for TFT applications.

Keywords

carbon nanotube field effect transistors; carbon nanotubes; electrophoresis; thin film transistors; C; DEP factors; density-controlled SWNT channels; dielectrophoretic assembly; on-off current ratio; single-walled carbon nanotube thin-film transistor; well-aligned SWNT channels; Assembly; Carbon nanotubes; Dielectrophoresis; Electrodes; Electron tubes; Logic gates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294878