Crystallization of amorphous silicon films by high-frequency tapping of molten silicon using piezo actuator

Author

Akazawa, Muneki ; Zhou, Yuan ; Sakaike, Kohei ; Hayashi, Shohei ; Hanafusa, Hiroaki ; Higashi, Seiichiro

Author_Institution

Dept. of Semicond. Electron. & Integration Sci., Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2012

fDate

4-6 July 2012

Firstpage

215

Lastpage

218

Abstract

We have proposed crystallizaiton technique of amorphous Si films by moleten Si contacting method using piezo actuator, and observed continuous crystallization of amorphous Si by tapping of molten Si during substrate scanning. Under a condition of 88% duty ratio of the voltage applied to piezo actuator and scanning speed 100 mm/s, we succeeded in continuous crystallization of amorphous Si under maximum piezo frequency of 1 kHz. From the results of two-dimension thermal diffusion simulation, we concluded that the phase transformation occurred via solid phase crystallization of a-Si.

Keywords

amorphous semiconductors; crystallisation; piezoelectric actuators; silicon; tapping (machining); thermal diffusion; Si; Si contacting method; amorphous silicon film crystallization; continuous crystallization; frequency 1 kHz; high-frequency tapping; molten Si tapping; molten silicon; phase transformation; piezoactuator; scanning speed; solid phase crystallization; substrate scanning; two-dimension thermal diffusion simulation; velocity 100 mm/s; Actuators; Crystallization; Films; Silicon; Solids; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294886