Crystallization of amorphous silicon films by high-frequency tapping of molten silicon using piezo actuator

We have proposed crystallizaiton technique of amorphous Si films by moleten Si contacting method using piezo actuator, and observed continuous crystallization of amorphous Si by tapping of molten Si during substrate scanning. Under a condition of 88% duty ratio of the voltage applied to piezo actuator and scanning speed 100 mm/s, we succeeded in continuous crystallization of amorphous Si under maximum piezo frequency of 1 kHz. From the results of two-dimension thermal diffusion simulation, we concluded that the phase transformation occurred via solid phase crystallization of a-Si.